Infineon IPG20N06S415ATMA2
$ 0.816
Production
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Inventory History
3 month trend: -1.59%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPG20N06S415ATMA2.
CAD Models
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Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-10-05
Lifecycle StatusProduction (Last Updated: 3 months ago)
Related Parts
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STMicroelectronicsSTD20NF06T4
N-channel 60 V, 0.032 Ohm typ., 24 A Power MOSFET in DPAK package
InfineonIPD25N06S4L30ATMA2
TO-252 SMD MOSFET 60V 25A 30mΩ@25A,10V 29W(Tc) 16V 2.2V@8µA 16.3nC@10V 1.22nF@25V N-Ch
STMicroelectronicsSTD20NF06LT4
Trans MOSFET N-CH 60V 24A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 24A DPAK
Descriptions
Descriptions of Infineon IPG20N06S415ATMA2 provided by its distributors.
60V, Dual N-Ch, 15.5 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-T2, PG-TDSON-8, RoHS
Infineon SCT
Mosfet,dual, N-Ch, 60V, 20A, Pg-Tdson; |Infineon Technologies IPG20N06S415ATMA2
Summary of Features: Dual N-channel Normal Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -1.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance15.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.74 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation50 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements2
On-State Resistance15.5 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation50 W
Rds On Max15.5 mΩ
Rise Time2 ns
Turn-Off Delay Time17 ns
Turn-On Delay Time12 ns
Dimensions
Height1 mm
Length5.15 mm
Width6.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPG20N06S415ATMA2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
RatingsAEC-Q101
REACH SVHCAffected
RoHSCompliant
Compliance Statements