Infineon IPD90N04S403ATMA1

MOSFET N-CH 40V 90A TO252-3 N-Channel 40 V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313

N-Channel 40 V 3.2 mOhm 66.8 nC OptiMOS®-T2 Power-Transistor - PG-TO252-3-313

Power MOSFET, N Channel, 40 V, 90 A, 0.0032 ohm, TO-252 (DPAK), Surface Mount

40V, N-Ch, 3.2 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS

OPTIMOS-T2 POWER-TRANSISTOR Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications