Infineon IPD65R660CFDATMA1

Name: Infineon IPD65R660CFDATMA1
Brand: Infineon
SKU: IPD65R660CFDATMA1

Trans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R

$ 0.813

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPD65R660CFDATMA1	14,296					0.979	0.813	0.724	1h
Farnell	2	IPD65R660CFDATMA1	0	1	Cut Tape	1.730*	1.498*	1.250*	1.034*	0.946*	1d
Verical	2	IPD65R660CFDATMA1	13,469	307					1.016	0.906
Worldway Electronics		IPD65R660CFDATMA1	9,912	7	Tape & Reel		0.230	0.223	0.211	0.211	1h
Aztech		IPD65R660CFDATMA1	10,985			2.560	2.560	2.560	2.560	2.560	22h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD65R660CFDATMA1.

IHS

Datasheet21 pages0 years ago

element14 APAC

TME

Inventory History

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Alternate Parts

This Part

Alternate Parts

InfineonIPD65R660CFDATMA1

InfineonIPD65R660CFDBTMA1

Price @ 1000

$ 0.813

$ 0.614

Stock

93,712

240,961

Authorized Distributors

2

Mount

-

Surface Mount

Case/Package

-

TO-252-3

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

6 A

Threshold Voltage

-

Rds On Max

-

660 mΩ

Gate to Source Voltage (Vgs)

-

20 V

Power Dissipation

63 W

Input Capacitance

-

615 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-01-20

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Descriptions

Descriptions of Infineon IPD65R660CFDATMA1 provided by its distributors.

Trans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R

Verical

Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 650V, 6A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.594ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 62.5W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CFD2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon