Infineon IPB180N10S402ATMA1

Name: Infineon IPB180N10S402ATMA1
Brand: Infineon
SKU: IPB180N10S402ATMA1

Power MOSFET, N Channel, 100 V, 180 A, 2.5 mOhm, TO-263 (D2PAK), 7 Pins, Surface Mount

$ 2.704

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SKU

Min

Pkg

Bulk Pricing

USD

20h

Cut Tape

USD

1.210

Rochester Electronics

USD

18h

IPB180N10S402ATMA1CT-ND

2,133

Cut Tape

USD

USD

3 month trend: +13.42%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB180N10S402ATMA1.

IHS

Datasheet9 pages3 years ago

Datasheet9 pages13 years ago

Inventory History

3 month trend:

+13.42%

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Supply Chain

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-02-28

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPB180N10S402ATMA1 provided by its distributors.

Power MOSFET, N Channel, 100 V, 180 A, 2.5 mOhm, TO-263 (D2PAK), 7 Pins, Surface Mount

Avnet

100V, N-Ch, 2.5 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 180A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

Semicontronic

N-channel - Enhancement modeAEC qualifiedMSL1 up to 260°C peak reflow175°C operating temperatureGreen product (RoHS compliant)100% Avalanche testedSimulation/SPICE-Model

Infineon

MOSFET, AEC-Q101, N-CH, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell