Infineon IPB031N08N5ATMA1

Name: Infineon IPB031N08N5ATMA1
Brand: Infineon
SKU: IPB031N08N5ATMA1

MOSFET N-CH 80V 120A D2PAK N-Channel 80 V 120A (Tc) 167W (Tc) Surface Mount PG-TO263-3

$ 1.269

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Min

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Newark

IPB031N08N5ATMA1

859

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USD

IPB031N08N5ATMA1CT-ND

8,865

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USD

3 month trend: -10.83%

CAD Models

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Datasheets & Documents

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element14 APAC

Datasheet12 pages0 years ago

Inventory History

3 month trend:

-10.83%

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Supply Chain

Country of OriginAustria, Germany, Malaysia, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-12-17

Lifecycle StatusProduction (Last Updated: 4 weeks ago)

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Descriptions

Descriptions of Infineon IPB031N08N5ATMA1 provided by its distributors.

MOSFET N-CH 80V 120A D2PAK N-Channel 80 V 120A (Tc) 167W (Tc) Surface Mount PG-TO263-3

Eurochip Technologies LTD

Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 120A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N-CH, 80V, 120A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 167W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Infineon