Infineon AUIRF2804WL
$ 7.28
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-11-10
Lifecycle StatusObsolete (Last Updated: 9 months ago)
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Descriptions
Descriptions of Infineon AUIRF2804WL provided by its distributors.
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Wide Lead Package
MOSFET N-CH 40V 240A TO262-3 N-Channel 40 V 240A (Tc) 300W (Tc) Through Hole TO-262-3 Wide
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 295A Automotive 3-Pin(3+Tab) TO-262WL Tube
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering; Relay Replacement
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.978 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance1.8 mΩ
Package Quantity50
Power Dissipation300 W
Rds On Max1.8 mΩ
Rise Time241 ns
Turn-Off Delay Time71 ns
Turn-On Delay Time19 ns
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements