Datasheets & Documents
Download datasheets and manufacturer documentation for onsemi IRFW630BTM_FP001.
Descriptions
Descriptions of onsemi IRFW630BTM_FP001 provided by its distributors.
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R
Discrete MOSFET, TO-263 2L (D2PAK), 6400-TAPE REEL
N-CH/200V/9A/0.4OHM/Substitute of IRFW630ATM
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
200V N-Channel B-FET / Substitute of IRFW630A
FAIRCHILD ,IRFW630BTM_FP001 <NV
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):0.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263 ;RoHS Compliant: Yes
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance720 pF
Max Operating Temperature150 °C
Max Power Dissipation72 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max400 mΩ
Rise Time70 ns
Turn-Off Delay Time60 ns
Turn-On Delay Time11 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for onsemi IRFW630BTM_FP001.
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements