Descriptions of Diodes Inc. ZXMN3A01F provided by its distributors.
806mW 20V 3.9nC@ 10V 30V 120mΩ@ 10V 190pF@ 25V SOT-23 SMD mount
; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:2A; On Resistance, Rds(on):0.12ohm; Package/Case:SOT-23; Termination Type:SMD; Current, Idm pulse:8A; Drain-Source Breakdown Voltage:30V ;RoHS Compliant: Yes
Trans MOSFET N-CH 30V 1.8A 3-Pin SOT-23
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET BVDSS: 25V~30V SOT23 T&R 3K
MOSFET, N, SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:2A; Resistance, Rds On:0.12ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:8A; No. of Pins:3; Power, Pd:625mW; Power, Ptot:625mW; Resistance, Rds on Max:0.12ohm; SMD Marking:7N3; Temperature, Current:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V; Voltage, Vgs th Min:1V