Diodes Inc. ZTX649
$ 0.404
EOL
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.404
$ 0.471
Stock
73,792
158,053
Authorized Distributors
6
5
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
25 V
25 V
Max Collector Current
2 A
2 A
Transition Frequency
240 MHz
150 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
15
15
Power Dissipation
1 W
1 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-02-01
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-10-28
LTD Date2027-04-28
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30V 1W 2A 120MHz 2V@1.5A30mA NPN +150¡Í@(Tj) TO-92-3LF Bipolar Transistors - BJT ROHS
Descriptions
Descriptions of Diodes Inc. ZTX649 provided by its distributors.
Bipolar (BJT) Single Transistor, General Purpose, NPN, 25 V, 2 A, 1 W, E-Line, Through Hole
ZTX649 Series NPN 2 A 25 V Silicon Planar Medium Power Transistor - TO-92-3
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
500mV@ 200mA,2A NPN 1W 5V 100nA 35V 25V 6A EP-3SC , 4.77mm*2.41mm*4.01mm
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency Typ ft:240MHz; Power Dissipation Pd:1W; DC Collector Current:2A; DC Current Gain hFE:200; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:2A; Current Ic @ Vce Sat:2A; Current Ic Continuous a Max:2A; Current Ic hFE:1A; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:240MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Pin Configuration:e; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:35V
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Technical Specifications
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)35 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)25 V
Continuous Collector Current2 A
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency240 MHz
Gain Bandwidth Product240 MHz
hFE Min15
Max Collector Current2 A
Max Operating Temperature200 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1 W
Transition Frequency240 MHz
Voltage Rating (DC)25 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements