Diodes Inc. MMBT4403T-7-F
$ 0.067
Production
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. MMBT4403T-7-F.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-02-19
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Descriptions
Descriptions of Diodes Inc. MMBT4403T-7-F provided by its distributors.
Bipolar (BJT) Single Transistor, PNP, 40 V, 600 mA, 150 mW, SOT-523, Surface Mount
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
40V 150mW 100@150mA,2V 600mA PNP SOT-523-3 Bipolar Transistors - BJT ROHS
750mV@ 50mA,500mA PNP 150mW 5V 40V 40V 600mA SOT-523 1.6mm*800¦Ìm*800¦Ìm
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-523
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight2.012816 mg
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage-750 mV
Collector Emitter Voltage (VCEO)40 V
Continuous Collector Current-600 mA
Current Rating-600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min20
Max Breakdown Voltage40 V
Max Collector Current600 mA
Max Frequency200 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityPNP
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency200 MHz
Voltage Rating (DC)-40 V
Dimensions
Height750 µm
Length1.6 mm
Width800 µm
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. MMBT4403T-7-F.
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements