Diodes Inc. DMN10H100SK3-13
$ 0.403
Production
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Inventory History
3 month trend: -0.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMN10H100SK3-13.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-05-05
Lifecycle StatusProduction (Last Updated: 5 months ago)
Related Parts
Diodes Inc.DMN10H099SK3-13
Mosfet, N-Ch, 100V, 17A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN10H099SK3-13
onsemiHUF76619D3S
18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 18A DPAK
Descriptions
Descriptions of Diodes Inc. DMN10H100SK3-13 provided by its distributors.
Mosfet, N-Ch, 100V, 18A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN10H100SK3-13
Trans MOSFET N-CH 100V 18A 3-Pin(2+Tab) DPAK T/R
100V N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
Diodes Inc SCT
Power Field-Effect Transistor, 14A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
MOSFET, N-CH, 100V, 18A, TO-252;
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: -0.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.172 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation37 W
Manufacturer Package IdentifierTO252 (DPAK)
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation37 W
Rds On Max80 mΩ
Turn-Off Delay Time20 ns
Turn-On Delay Time5.4 ns
Dimensions
Height2.52 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMN10H100SK3-13.