Diodes Inc. DMN1019USN-13
$ 0.168
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Inventory History
3 month trend: -29.65%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMN1019USN-13.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-05-30
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Descriptions
Descriptions of Diodes Inc. DMN1019USN-13 provided by its distributors.
DMN1019 Series 12 V 9.3 A N-Channel Enhancement Mode Mosfet - SC-59-3
Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R
Power Field-Effect Transistor, 9.3A I(D), 12V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
N-Channel Mosfet, 12V VDS, 8±V VGS
Diodes Inc SCT
MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 12V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 530mV; P
IC HEX VOLT-LVL SHIFTER 16-TSSOP
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: -29.65%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)9.3 A
Drain to Source Breakdown Voltage12 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)12 V
Element ConfigurationSingle
Fall Time16.8 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance2.426 nF
Max Operating Temperature150 °C
Max Power Dissipation1.2 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max10 mΩ
Rise Time57.6 ns
Schedule B8541290080
Turn-Off Delay Time22.2 ns
Turn-On Delay Time7.6 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMN1019USN-13.