가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SIHP12N60E-GE3 | 0 | 1 | 12h | ||||||||
| TTI | SIHP12N60E-GE3 | 0 | 1K | Tube | 1h | |||||||
| Avnet | SIHP12N60E-GE3 | 0 | 1K | 4d | ||||||||
| Future Electronics | SIHP12N60E-GE3 | 0 | 20 | Bulk | ||||||||
| TTI Asia | SIHP12N60E-GE3 | 문의하기 | 2h |
설명
유통업체에서 제공한 Vishay SIHP12N60E-GE3에 대한 설명입니다.
E-Series N-Channel 600 V 147 W 0.38 O 58 nC Flange Mount Power Mosfet - TO-220AB
147W(Tc) 30V 4V@ 250¦ÌA 58nC@ 10 V 1N 600V 380m¦¸@ 6A,10V 12A 937pF@100V TO-220AB 9.01mm
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB
VISHAY SIHP12N60E-GE3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
MOSFET, N-CH, 600V, 12A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:147W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance937 pF
Max Operating Temperature150 °C
Max Power Dissipation147 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation147 W
Rds On Max380 mΩ
Resistance380 mΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time35 ns
Turn-On Delay Time14 ns