대체 부품
Price @ 1000
$ 0.717
$ 1.691
Stock
54,501
25
Authorized Distributors
3
1
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
-
Drain to Source Voltage (Vdss)
650 V
-
Continuous Drain Current (ID)
8.5 A
8.5 A
Threshold Voltage
4 V
-
Rds On Max
930 mΩ
-
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
167 W
-
Input Capacitance
1.417 nF
-
공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay IRFB9N65APBF에 대한 설명입니다.
Single N-Channel 650 V 0.93 Ohms Flange Mount Power Mosfet - TO-220-3
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 167 W
POWER MOSFET Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:8.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:167W; No. Of Pins:3Pins Rohs Compliant: No |Vishay IRFB9N65APBF.
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)8.5 A
Drain to Source Resistance930 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.417 nF
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation167 W
Rds On Max930 mΩ
Recovery Time739 ns
Resistance930 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time34 ns
Turn-On Delay Time14 ns
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm