onsemi FQP9N50C

Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220

Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Rail

Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):650mohm; Rds(on) Test Voltage Vgs:10V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:9A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.