대체 부품
Price @ 1000
$ 1.31
$ 1.611
Stock
335,659
4,711
Authorized Distributors
6
1
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
-
Drain to Source Voltage (Vdss)
600 V
-
Continuous Drain Current (ID)
9.2 A
9.2 A
Threshold Voltage
4 V
-
Rds On Max
750 mΩ
-
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
170 W
-
Input Capacitance
1.4 nF
-
공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-10-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
설명
유통업체에서 제공한 Vishay IRFB9N60APBF에 대한 설명입니다.
Single N-Channel 500 V 0.75 Ohms Flange Mount Power Mosfet - TO-220AB
Power MOSFET, N Channel, 600 V, 9.2 A, 0.75 ohm, TO-220AB, Through Hole
600V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE
POWER MOSFET Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 600V, 9.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):750mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.2A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)9.2 A
Current Rating9.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation170 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)600 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm