공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-03-16
Lifecycle StatusObsolete (Last Updated: 7 months ago)
관련 부품
설명
유통업체에서 제공한 Vishay IRL630STRLPBF에 대한 설명입니다.
IRL630S Series 200 V 9 A Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):400mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:SMD-220 ;RoHS Compliant: Yes
MOSFET, N, 200V, D2-PAK; Transistor type:MOSFET; Current, Id cont:9A; Resistance, Rds on:500ohm; Case style:D2-PAK; Current, Id cont @ 100 degree C:5.7A; Current, Id cont @ 25 degree C:9A; Current, Idm pulse:36A; Power, Pd:74W; Termination Type:SMD; Transistor polarity:N; Voltage, Rds measurement:4.5V; Voltage, Vds:200V; Voltage, Vds max:200V; Voltage, Vgs th max:2V; Voltage, Vgs th min:1V; Rth:1.7
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기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)9 A
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance1.1 nF
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max400 mΩ
Rise Time57 ns
Schedule B8541290080
TerminationSMD/SMT
Turn-Off Delay Time38 ns
Turn-On Delay Time8 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm