가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF630NSTRRPBF | 0 | 1600 | Bulk | 15h | |||||||
| Win Source | WS-IRF630NSTRRPBF | 14,000 | 105 | 19m | ||||||||
| Worldway Electronics | IRF630NSTRRPBF | 3,781 | 7 | Tape & Reel | 23h | |||||||
| Anlinkda | IRF630NSTRRPBF | 30,084 | 5h | |||||||||
| RC Electronics | IRF630NSTRRPBF | 27,020 | 1 | >1wk |
대체 부품
Price @ 1000
$ 1.63
$ 1.63
Stock
159,476
581,482
581,482
Authorized Distributors
1
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
200 V
200 V
200 V
Continuous Drain Current (ID)
9.3 A
9.3 A
9.3 A
Threshold Voltage
-
-
-
Rds On Max
300 mΩ
300 mΩ
300 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
82 W
82 W
82 W
Input Capacitance
575 pF
575 pF
575 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
관련 부품
VishayIRF9640STRRPBF
MOSFET P-CH 200V 11A D2PAK / P-Channel 200 V 11A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
설명
유통업체에서 제공한 Infineon IRF630NSTRRPBF에 대한 설명입니다.
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.3A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)9.3 A
Current Rating9.3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance575 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation82 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance300 mΩ
Package Quantity800
Power Dissipation82 W
Rds On Max300 mΩ
Rise Time14 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time7.9 ns
Voltage Rating (DC)200 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm