공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF640NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V
InfineonIRF9530NPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
설명
유통업체에서 제공한 Vishay IRF9540PBF에 대한 설명입니다.
Single P-Channel 100 V 0.2 Ohms Flange Mount Power Mosfet - TO-220AB
Power MOSFET, P Channel, 100 V, 19 A, 0.2 ohm, TO-220AB, Through Hole
Trans MOSFET P-CH 100V 19A 3-Pin (3+Tab) TO-220AB
100V 19A 150W 200m´Î@10V11A 4V@250Ã×A P Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, -100V, -19A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:-19A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
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기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)19 A
Current Rating-19 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation150 W
Rds On Max200 mΩ
Recovery Time260 ns
Resistance200 mΩ
Rise Time73 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time34 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)-100 V
Dimensions
Height19.89 mm
Length10.41 mm
Width4.7 mm