공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-01-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
관련 부품
InfineonIRF640NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V
InfineonIRFB4020PBF
200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 onsemi IRL640A에 대한 설명입니다.
Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220
N CHANNEL MOSFET, 200V, 18A, TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:18A;
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 200 V 0.18 Ohm Flange Mount Mosfet - TO-220
IC IRL640A N-Channel Power MOSFET 200V 18A TO-220
200V 18A 110W 180m´Î@5V9A 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)18 A
Current Rating18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.705 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation110 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time46 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)200 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책