공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-07-08
Lifecycle StatusProduction (Last Updated: 6 months ago)
관련 부품
InfineonIRF640NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V
InfineonIRFB4020PBF
200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 Vishay IRF640PBF에 대한 설명입니다.
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3
Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm, TO-220, Through Hole
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 200V, 18A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: Yes |Vishay IRF640PBF.
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:TO-220; Power Dissipation Pd:125W; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)18 A
Current Rating18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time51 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)200 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책