공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-22
Lifecycle StatusEOL (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
관련 부품
설명
유통업체에서 제공한 onsemi FQP19N20C에 대한 설명입니다.
Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, TO-220
Transistor MOSFET N-Channel 200 Volt 19A 3-Pin(3+Tab) TO-220AB
N-Channel 200 V 0.17 Ohm Through Hole Mosfet - TO-220-3
N CHANNEL MOSFET, 200V, 19A, TO-220; Tra; N CHANNEL MOSFET, 200V, 19A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:200V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)19 A
Current Rating19 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance170 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.08 nF
Max Operating Temperature150 °C
Max Power Dissipation139 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation139 W
Rds On Max170 mΩ
Resistance170 mΩ
Rise Time150 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time135 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)200 V
Dimensions
Height20.4 mm
Length10.1 mm
Width4.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책