대체 부품
Price @ 1000
$ 0.943
$ 0.985
$ 0.985
Stock
104,136
124,033
124,033
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
D2PAK
D2PAK
Drain to Source Voltage (Vds)
200 V
200 V
200 V
Continuous Drain Current (ID)
5.2 A
5.2 A
5.2 A
Threshold Voltage
-
-
-
Rds On Max
800 mΩ
800 mΩ
800 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3 W
3 W
3 W
Input Capacitance
260 pF
260 pF
260 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-11
Lifecycle StatusProduction (Last Updated: 9 months ago)
설명
유통업체에서 제공한 Vishay IRF620STRRPBF에 대한 설명입니다.
Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - D2PAK
Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:5.2A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SMD-220 ;RoHS Compliant: Yes
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)5.2 A
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance260 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3 W
Rds On Max800 mΩ
Resistance800 mΩ
Rise Time22 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time7.2 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm