공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-09-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-06
LTD Date2008-12-06
관련 부품
InfineonIRF6215SPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS +/-20V
InfineonIRF630NSPBF
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
설명
유통업체에서 제공한 onsemi FQB10N20LTM에 대한 설명입니다.
MOSFET N-CH 200V 10A D2PAK
Power Field-Effect Transistor, 10A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs 200V N-Ch QFET Logic Level
N-CHANNEL POWER MOSFET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time95 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance830 pF
Max Operating Temperature150 °C
Max Power Dissipation87 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max360 mΩ
Rise Time150 ns
Turn-Off Delay Time50 ns
Voltage Rating (DC)200 V