가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | IRF640STRLPBF | 0 | 800 | 5h | ||||||||
| TTI | IRF640STRLPBF | 0 | 800 | Tape & Reel | 18h | |||||||
| Newark | IRF640STRLPBF | 0 | 1 | Cut Tape | ||||||||
| Future Electronics | IRF640STRLPBF | 0 | 800 | Tape & Reel | ||||||||
| Avnet | IRF640STRLPBF | 0 | 800 | 5d |
대체 부품
Price @ 1000
$ 1.249
$ 1.094
$ 1.094
Stock
138,720
146,233
146,233
Authorized Distributors
6
6
6
Mount
Surface Mount, Through Hole
Surface Mount
Surface Mount
Case/Package
TO-263-3
DPAK
DPAK
Drain to Source Voltage (Vdss)
200 V
200 V
200 V
Continuous Drain Current (ID)
18 A
18 A
18 A
Threshold Voltage
-
4 V
4 V
Rds On Max
180 mΩ
180 mΩ
180 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
130 W
3.1 W
3.1 W
Input Capacitance
1.3 nF
1.3 nF
1.3 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF3315SPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55
InfineonAUIRF3315S
MOSFET, N-CH, 150V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
VishayIRF644STRLPBF
3.1W(Ta),125W(Tc) 20V 4V@ 250¦ÌA 68nC@ 10 V 1N 250V 280m¦¸@ 8.4A,10V 14A 1.3nF@25V D2PAK,TO-263
설명
유통업체에서 제공한 Vishay IRF640STRLPBF에 대한 설명입니다.
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
MOSFET N-CH 200V 18A D2PAK / Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation130 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time51 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time14 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm