대체 부품
Price @ 1000
$ 2.18
$ 1.465
$ 1.465
Stock
571,696
777,995
777,995
Authorized Distributors
4
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
TO-263
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
200 A
180 A
180 A
Threshold Voltage
-
-
-
Rds On Max
2.4 mΩ
4.3 mΩ
4.3 mΩ
Gate to Source Voltage (Vgs)
20 V
16 V
16 V
Power Dissipation
375 W
370 W
370 W
Input Capacitance
12 nF
11.36 nF
11.36 nF
공급망
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
엔지니어링 리소스
Texas Instruments CSD19536KTT의 평가 키트와 참조 설계를 확인하세요.
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설명
유통업체에서 제공한 Texas Instruments CSD19536KTT에 대한 설명입니다.
100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175
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- Texas Instruments Inc.
기술 사양
Physical
Case/PackageTO-263
Contact PlatingTin
MountSurface Mount
Number of Pins2
Technical
Continuous Drain Current (ID)200 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Number of Channels1
PackagingTape & Reel (TR)
Power Dissipation375 W
Rds On Max2.4 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time13 ns
Dimensions
Height4.7 mm
Length10.16 mm
Thickness4.4 mm
Width8.41 mm