대체 부품
Price @ 1000
$ 1.465
$ 2.18
$ 2.18
Stock
776,357
532,737
532,737
Authorized Distributors
6
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-263
TO-263
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
180 A
200 A
200 A
Threshold Voltage
-
-
-
Rds On Max
4.3 mΩ
2.4 mΩ
2.4 mΩ
Gate to Source Voltage (Vgs)
16 V
20 V
20 V
Power Dissipation
370 W
375 W
375 W
Input Capacitance
11.36 nF
12 nF
12 nF
관련 부품
InfineonAUIRFS4010-7TRL
Trans MOSFET N-CH Si 100V 190A Automotive 7-Pin(6+Tab) D2PAK T/R / HEXFETPower MOSFET
onsemiFDB035N10A
Power MOSFET, N Channel, 100 V, 214 A, 0.0035 ohm, TO-263 (D2PAK), Surface Mount
InfineonIRFS4010TRLPBF
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK
설명
유통업체에서 제공한 Infineon IRLS4030TRLPBF에 대한 설명입니다.
N CH POWER MOSFET, HEXFET, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Con
Single N-Channel 100 V 3.9 mOhm 93 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 100 V, 180 A, 0.0034 ohm, TO-263 (D2PAK), Surface Mount
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
Benefits: RoHS Compliant; Logic Level | Target Applications: Battery Operated Drive
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 100V, 180A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.3 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time170 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance11.36 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
On-State Resistance4.3 mΩ
Package Quantity800
Power Dissipation370 W
Rds On Max4.3 mΩ
Resistance3.9 MΩ
Rise Time330 ns
Schedule B8541290080
Turn-Off Delay Time110 ns
Turn-On Delay Time74 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책