대체 부품
Price @ 1000
$ 1.33
$ 1.33
Stock
165,328
804,923
804,923
Authorized Distributors
0
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
180 A
180 A
180 A
Threshold Voltage
-
-
-
Rds On Max
4.7 mΩ
4.7 mΩ
4.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
375 W
375 W
375 W
Input Capacitance
9.575 nF
9.575 nF
9.575 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-16
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2024-02-29
LTD Date2024-08-31
관련 부품
InfineonIRFS4010TRLPBF
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK
InfineonIRFS4010TRRPBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRFS4010PBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
onsemiFDB035N10A
Power MOSFET, N Channel, 100 V, 214 A, 0.0035 ohm, TO-263 (D2PAK), Surface Mount
설명
유통업체에서 제공한 Infineon AUIRFS4010TRL에 대한 설명입니다.
Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) D2PAK T/R
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.575 nF
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity800
PackagingTape & Reel (TR)
Power Dissipation375 W
Rds On Max4.7 mΩ
Rise Time86 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time21 ns