Texas Instruments CSD17312Q5

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.7 mOhm 8-VSON-CLIP -55 to 150

the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.

3.2W(Ta) 10V，8V 1.5V@ 250µA 36nC@ 4.5 V 1individualNChannel 30V 1.5mΩ@ 35A,8V 38A，100A 5.24nF@15V SON SMD mount 6mm*5mm*1mm

MOSFET, N-CH, 30V, 100A, 8SON; Polarité transistor: Canal N; Courant de drain Id: 35A; Tension Vds max..: 30V; Résistance Rds(on): 0.0012ohm; Tension, mesure Rds: 8V; Tension de seuil Vgs: 1.1V; Dissipation de puissance Pd: 3.2

MOSFET, N-CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:3.2W; Transistor Case Style:SON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:1.1V