공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-03
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
관련 부품
InfineonIRFH8324TR2PBF
N CH POWER MOSFET, HEXFET, 30V, 23A, PQFN-8; Transistor Polarity:N Channel; Cont
STMicroelectronicsSTD75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
설명
유통업체에서 제공한 Infineon IRFH7932TR2PBF에 대한 설명입니다.
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, 30V, 24A, 3.3MOHM, 34 NC QG, PQFN56
Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R
MOSFET PQFN-8 (5x6) N 30V 25 A
Power Field-Effect Transistor, 25A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):3.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
MOSFET, N CH, 30V, 24A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals3
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.27 nF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation3.1 W
Rds On Max3.3 mΩ
Recovery Time32 ns
Resistance3.3 MΩ
Rise Time48 ns
Threshold Voltage1.8 V
Turn-Off Delay Time23 ns
Turn-On Delay Time20 ns
Dimensions
Height939.8 µm
Length5 mm
Width5.1054 mm