공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-31
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySIHU7N60E-GE3
VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
STMicroelectronicsSTU11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package
설명
유통업체에서 제공한 STMicroelectronics STU9N60M2에 대한 설명입니다.
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
STU9N60M2 N-channel MOSFET Transistor, 5.5 A, 650 V, 3-Pin IPAK
N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.5 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance780 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time13.5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance320 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation60 W
Rds On Max780 mΩ
Rise Time7.5 ns
Schedule B8541290080
Turn-Off Delay Time22 ns
Turn-On Delay Time8.8 ns
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm