관련 부품
InfineonIPU60R950C6BKMA1
MOSFET N-CH 600V 4.4A TO251-3 N-Channel 600 V 4.4A (Tc) 37W (Tc) Through Hole PG-TO251-3
InfineonSPS04N60C3BKMA1
MOSFET N-CH 650V 4.5A TO251-3 N-Channel 650 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO251-3-11
설명
유통업체에서 제공한 STMicroelectronics STU7N60M2에 대한 설명입니다.
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
STU7N60M2 N-CHANNEL MOSFET TRANSISTOR, 5 A, 650 V, 3-PIN IPAK
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
60W(Tc) 25V 4V@ 250µA 8.8nC@ 10 V 1individualNChannel 600V 950mΩ@ 2.5A,10V 5A 271pF@100V IPAK，TO-251 Through hole mounting
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5 A
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vds)600 V
Element ConfigurationSingle
Fall Time15.9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance271 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation60 W
Rds On Max950 mΩ
Rise Time7.2 ns
Schedule B8541290080
Turn-Off Delay Time19.3 ns
Turn-On Delay Time7.6 ns
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm