가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SIHU7N60E-GE3 | 450 | 1 | |||||||||
| DigiKey | 742-SIHU7N60E-GE3-ND | 2,240 | 1 | Tube | ||||||||
| TME | SIHU7N60E-GE3 | 0 | 3K | 19h | ||||||||
| Avnet | SIHU7N60E-GE3 | 0 | 3K | 4d | ||||||||
| TTI Europe | SIHU7N60E-GE3 | 0 | 3K | Tube | 23h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-06
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
International RectifierIPU60R600C6BKMA1
MOSFET N-CH 600V 7.3A TO-251 / Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-251 Tube
STMicroelectronicsSTU12N60M2
N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in IPAK package
STMicroelectronicsSTU10N60M2
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in IPAK package
onsemiNDD60N550U1-1G
Tube Through Hole N-Channel Single Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
onsemiNDD60N550U1-35G
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 8.2A Tc 8.2A 94W Tc 600V
설명
유통업체에서 제공한 Vishay SIHU7N60E-GE3에 대한 설명입니다.
VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
78W(Tc) 30V 4V@ 250¦ÌA 40nC@ 10 V 1N 600V 600m¦¸@ 3.5A,10V 7A 680pF@100V TO-251AA 6.22mm
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK
Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N-CH, 600V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
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기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance680 pF
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage609 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation78 W
Rds On Max600 mΩ
Rise Time13 ns
Threshold Voltage2 V
Turn-Off Delay Time24 ns
Turn-On Delay Time13 ns