공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-07
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2015-09-15
LTD Date2015-12-15
관련 부품
InfineonSPS04N60C3BKMA1
MOSFET N-CH 650V 4.5A TO251-3 / Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251 Tube
onsemiNDD60N900U1-1G
Tube Through Hole N-Channel Single Mosfet Transistor 5.7A Tc 5.7A 74W Tc 600V
InfineonIPS65R1K0CEAKMA1
MOSFET N-CH 650V 4.3A TO251 / N-Channel 650 V 4.3A (Tc) 37W (Tc) Through Hole TO-251
설명
유통업체에서 제공한 Infineon IPU60R950C6BKMA1에 대한 설명입니다.
Trans MOSFET N-CH 650V 4.4A 3-Pin TO-251 Tube
Power Field-Effect Transistor, 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET N-Ch 650V 4.4A IPAK-3
new, original packaged
MOSFET, N-CH, 600V, 4.4A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.86ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.4 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance280 pF
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation37 W
Rds On Max950 mΩ
Rise Time8 ns
Turn-Off Delay Time60 ns
Turn-On Delay Time10 ns
Dimensions
Height6.22 mm
Length6.73 mm
Width2.41 mm