대체 부품
Price @ 1000
$ 0.89
Stock
6,441,612
472,999
Authorized Distributors
0
4
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
35 A
100 A
Threshold Voltage
1.55 V
1.1 V
Rds On Max
1.75 mΩ
1.5 mΩ
Gate to Source Voltage (Vgs)
22 V
10 V
Power Dissipation
-
3.2 W
Input Capacitance
5.8 nF
5.24 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-10-26
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2020-10-25
LTD Date2021-04-25
설명
유통업체에서 제공한 STMicroelectronics STL150N3LLH5에 대한 설명입니다.
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
STL150N3LLH5 N-channel MOSFET Transistor, 195 A, 30 V, 8-Pin PowerFLAT
Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5
114W(Tc) 22V 2.2V@ 250¦ÌA 40nC@ 4.5 V 1individualNChannel 30V 1.75m¦¸@ 17.5A,10V 195A 5.8nF@25V SMD mount 5mm*6mm*810¦Ìm
Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time47.8 ns
Gate to Source Voltage (Vgs)22 V
Input Capacitance5.8 nF
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max1.75 mΩ
Resistance1.75 mΩ
Rise Time30.8 ns
Threshold Voltage1.55 V
Turn-Off Delay Time65.8 ns
Turn-On Delay Time17.2 ns
Dimensions
Height950 µm
Length5 mm
Width6 mm