공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-14
Lifecycle StatusProduction (Last Updated: 3 months ago)
LTB Date2026-05-31
LTD Date2026-11-30
관련 부품
STMicroelectronicsSTL150N3LLH5
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
설명
유통업체에서 제공한 Infineon IRF6727MTRPBF에 대한 설명입니다.
Single N-Channel 30 V 1.7 mOhm 74 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)32 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.7 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.19 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance1.7 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max1.7 mΩ
Rise Time31 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time24 ns
Turn-On Delay Time21 ns
Dimensions
Height700 µm
Length6.35 mm
Width5.0546 mm