공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-09-18
LTD Date2023-03-18
관련 부품
InfineonSPD07N20GBTMA1
SIPMOSÒ Power Transistor Features N channel Enhancement mode Avalanche rated
STMicroelectronicsSTD10NF10T4
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
InfineonSPD08N50C3ATMA1
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK
onsemiIRLR120ATF
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 35W 9ns
VishaySUD08P06-155L-GE3
Single P-Channel 60 V 155 mOhm Surface Mount TrenchFET Power Mosfet - TO-252
설명
유통업체에서 제공한 STMicroelectronics STD7NS20T4에 대한 설명입니다.
N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package
N-Channel 200 V 0.4 Ohm 45 W Surface Mount MESH Overlay Power Mosfet - TO-252
STD7NS20T4 N-CHANNEL MOSFET TRANSISTOR, 7 A, 200 V, 3-PIN TO-252
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
45W 20V 4V@ 250uA 45nC@ 10 V 2individualNChannel 200V 400mΩ@ 3.5A,10V 7A 540pF@25V DPAK-3，TO-252-3 SMD mount 2.63mm(height)
MOSFET, N CH, 200V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance540 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation86 W
Rds On Max400 mΩ
Resistance400 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-On Delay Time5.6 ns
Voltage Rating (DC)200 V
Dimensions
Height2.63 mm
Length6.6 mm
Width6.2 mm