공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-16
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2011-03-02
LTD Date2011-09-02
관련 부품
STMicroelectronicsSTD6NF10T4
N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET
STMicroelectronicsSTD10NF10T4
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
InfineonIPD180N10N3GBTMA1
MOSFET N-CH 100V 43A TO252-3 N-Channel 100 V 43A (Tc) 71W (Tc) Surface Mount PG-TO252-3
설명
유통업체에서 제공한 onsemi IRLR120ATF에 대한 설명입니다.
N-CH/LL/100V/8.4A/0.2OHM@VGS=5V/Substitute of IRLR120TM
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
2.5W(Ta)，35W(Tc) 20V 2V@ 250µA 15nC@ 5 V 1individualNChannel 100V 220mΩ@ 4.2A,5V 8.4A 440pF@25V TO-252AA SMD mount 6.73mm*6.22mm*2.39mm
MOSFET, 100V, 8.4A; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)8.4 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance440 pF
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max220 mΩ
Rise Time10 ns
Threshold Voltage2 V
Turn-Off Delay Time19 ns