가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STD10NF10T4 | 67,500 | 2500 | Tape & Reel | ||||||||
| Newark | STD10NF10T4 | 3,609 | 5 | Cut Tape | ||||||||
| Verical | STD10NF10T4 | 40,000 | 2500 | |||||||||
| Arrow Electronics | STD10NF10T4 | 9,875 | 1 | |||||||||
| TME | STD10NF10T4 | 1,770 | 1 | 3h |
관련 부품
STMicroelectronicsSTD15NF10T4
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
onsemiIRLR120ATF
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 35W 9ns
설명
유통업체에서 제공한 STMicroelectronics STD10NF10T4에 대한 설명입니다.
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
STD10NF10T4 N-CHANNEL MOSFET TRANSISTOR, 13 A, 100 V, 3-PIN DPAK
N Channel Mosfet, 100V, 13A, D-Pak; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD10NF10T4
Power Field-Effect Transistor, 13A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight4.535924 g
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance460 pF
Max Operating Temperature175 °C
Max Power Dissipation50 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
PackagingTape and Reel
Power Dissipation50 W
Rds On Max130 mΩ
Resistance130 mΩ
Rise Time25 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time32 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)100 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm