가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STD4NS25T4 | 0 | 1 | Cut Tape | 1d | |||||||
| element14 APAC | STD4NS25T4 | 0 | 1 | Cut Tape | 1d | |||||||
| Microchip USA | STD4NS25T4 | 2,623 | 3500 | Tray | 3h | |||||||
| Win Source | WS-STD4NS25T4 | 2,390 | 80 | 11h | ||||||||
| Worldway Electronics | STD4NS25T4 | 20,364 | 7 | Tape & Reel | 10h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-10
LTD Date2013-05-10
관련 부품
STMicroelectronicsSTD10NF10T4
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
InfineonIPD088N06N3GBTMA1
Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount
설명
유통업체에서 제공한 STMicroelectronics STD4NS25T4에 대한 설명입니다.
N-CHANNEL 250V 0.9 OHM 4A DPAK MESH OVERLAY MOSFET
250 V-4 A-0.9 OHM DPAK N-CHANNEL MESH OVERLAY MOSFET Power Field-Effect Transistor, 4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Current Id Max:4A; Drain Source Voltage Vds:250V; On State Resistance:900mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:50W; Transistor Case Style:D-PAK; ;RoHS Compliant: Yes
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)250 V
Dual Supply Voltage250 V
Element ConfigurationSingle
Fall Time10.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance355 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage250 V
Min Operating Temperature-65 °C
Nominal Vgs3 V
Number of Elements1
PackagingCut Tape
Power Dissipation50 W
Rds On Max1.1 Ω
Rise Time18 ns
Threshold Voltage3 V
Turn-Off Delay Time12 ns
Voltage Rating (DC)250 V
Dimensions
Width6.8 mm