가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | STD65N55LF3 | 387 | 3K | Tray | 23h | |||||||
| Win Source | WS-STD65N55LF3 | 43 | 40 | 7h | ||||||||
| Worldway Electronics | STD65N55LF3 | 16,604 | 7 | Tape & Reel | 6h | |||||||
| IC Components Ltd. | STD65N55LF3 | 15,426 | 2d | |||||||||
| Aztech | STD65N55LF3 | 6,683 | 2h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-20
Lifecycle StatusObsolete (Last Updated: 1 month ago)
관련 부품
InfineonIRFR1018EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 56A;D-Pak;PD 110W;VGS +/-20
Diodes Inc.DMTH4007LK3-13
2.6W(Ta) 20V 3V@ 250¦ÌA 29.1nC@ 10 V 1N 40V 7.3m¦¸@ 20A,10V 16.8A,70A 1.895nF@30V TO-252-3
설명
유통업체에서 제공한 STMicroelectronics STD65N55LF3에 대한 설명입니다.
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK package
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) DPAK T/R
80 A 55 V 0.012 ohm N-CHANNEL Si POWER MOSFET TO-252
MOSFET N-Ch 55V 7.0mOh 110W STripFETIII 80A 55V
Automotive Power Discrete, 55V, 80A, DPAK, Tape and Reel
STMicroelectronics SCT
Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.2 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max8.5 mΩ
Resistance7 MΩ
Rise Time25 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time10 ns