Infineon IRFR1018EPBF

Name: Infineon IRFR1018EPBF
Brand: Infineon
SKU: IRFR1018EPBF

Mosfet, Power; N-ch; Vdss 60V; Rds(on) 7.1MILLIOHMS; Id 56A; D-pak; Pd 110W; Vgs +/-20

Obsolete

제조업체 페이지 데이터시트

가격 및 재고

공인 유통업체

비공인 재고 유통업체

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모든 가격 할인 보기

Distributor	SKU		Min	Pkg
Farnell	IRFR1018EPBF	0	5			1.581*	1.114*	0.774*	0.759*	23h
Win Source	WS-IRFR1018EPBF	23,690	70				0.764	0.509	0.509	39m
Worldway Electronics	IRFR1018EPBF	16,926	7	Tube		0.080	0.078	0.074	0.074	1d
Fly-Wing Technology	IRFR1018EPBF	108,637			0.807	0.662	0.641	0.600	0.600	3d
SHENGYU ELECTRONICS	IRFR1018EPBF	17,593	1		0.412	0.404	0.390	0.380	0.360	4d

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRFR1018EPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet10 페이지17년 전

Datasheet11 페이지17년 전

element14 APAC

iiiC

RS (Formerly Allied Electronics)

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InfineonIRFR1018EPBF

InfineonIRFR1018ETRPBF

Price @ 1000

$ 0.506

Stock

622,208

769,611

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

56 A

Threshold Voltage

4 V

Rds On Max

8.4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

110 W

Input Capacitance

2.29 nF

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-03-07

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

설명

유통업체에서 제공한 Infineon IRFR1018EPBF에 대한 설명입니다.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 56A;D-Pak;PD 110W;VGS +/-20

RS (Formerly Allied Electronics)

Single N-Channel 60 V 8.4 mOhm 69 nC HEXFET® Power Mosfet - TO-252-3, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:DPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon