onsemi FDD5612

N-Channel PowerTrench® MOSFET, 60V, 18A, 55mΩ

N-Channel 60 V 55 mOhm Surface Mount PowerTrench Mosfet - TO-252-3

Power Field-Effect Transistor, 18A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

3.8W(Ta)，42W(Tc) 20V 3V@ 250µA 11nC@ 10 V 1individualNChannel 60V 55mΩ@ 5.4A,10V 5.4A 660pF@30V TO-252AA SMD mount 6.73mm*6.22mm*2.39mm

TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:18A; Package / Case:TO-252; Power Dissipation Pd:3.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.