대체 부품
Price @ 1000
$ 0.783
$ 0.935
Stock
272,297
1,308,547
Authorized Distributors
6
6
Mount
Through Hole
Surface Mount
Case/Package
TO-251-3
DPAK
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
3 A
3 A
Threshold Voltage
-
3 V
Rds On Max
3.5 Ω
3.5 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
80 W
80 W
Input Capacitance
575 pF
575 pF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTD3NK80Z-1
N-CHANNEL 800V - 3.8 Ohm - 2.5A IPAK Zener-Protected SuperMESH™ Power MOSFET
설명
유통업체에서 제공한 STMicroelectronics STD4NK80Z-1에 대한 설명입니다.
N-CHANNEL 800V - 3 OHM - 3A IPAK Zener-Protected SuperMESH(TM) Power MOSFET
N-Channel 800 V 3.5 Ohm Through Hole SuperMESH Power Mosfet - IPAK
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package
Ciiva
N-CHANNEL 800 V-3 OHM-3 A-TO-220 ZENER-PROTECTED SUPERMESH MOSFET Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance575 pF
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation80 W
Rds On Max3.5 Ω
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time13 ns