가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-14223-5-ND | 75 | 1 | Tube | ||||||||
| Avnet | STU3N80K5 | 0 | 3K | 19h | ||||||||
| Future Electronics | STU3N80K5 | 0 | 3K | Tube | ||||||||
| Mouser | 511-STU3N80K5 | 2,731 | 1 | Tube | ||||||||
| Win Source | WS-STU3N80K5 | 9,200 | 90 | 18h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-07-12
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTD4NK80Z-1
N-CHANNEL 800V - 3 OHM - 3A IPAK Zener-Protected SuperMESH(TM) Power MOSFET
설명
유통업체에서 제공한 STMicroelectronics STU3N80K5에 대한 설명입니다.
STU3N80K5 N-channel MOSFET Transistor, 2.5 A, 800 V, 3-Pin IPAK
N-Channel 800 V 3.5 Ohm Through Hole SuperMESH5 Power Mosfet - IPAK
N-channel 800 V, 2.8 Ohm typ., 2.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
60W(Tc) 30V 5V@ 100¦ÌA 9.5nC@ 10 V 1N 800V 3.5¦¸@ 1A,10V 2.5A 130pF@100V IPAK,TO-251 8.4mm
Power Field-Effect Transistor, 2.5A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
800V 2.5A 2.8´Î@10V1A 60W 4V@100uA 0.6pF@100V N Channel 130pF@100V 9.5nC@0~10V -55¡Í~+150¡Í@(Tj) TO-251(I-PAK) MOSFETs ROHS
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight3.949996 g
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance130 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max3.5 Ω
Rise Time7.5 ns
Turn-Off Delay Time20.5 ns
Turn-On Delay Time8.5 ns
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm