공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-15
LTD Date2017-05-15
관련 부품
InfineonIPS80R1K4P7AKMA1
MOSFET N-CH 800V 4A TO251-3 / N-Channel 800 V 4A (Tc) 32W (Tc) Through Hole PG-TO251-3-11
InfineonIPS65R1K0CEAKMA1
MOSFET N-CH 650V 4.3A TO251 / N-Channel 650 V 4.3A (Tc) 37W (Tc) Through Hole TO-251
설명
유통업체에서 제공한 Infineon IPU80R1K4CEBKMA1에 대한 설명입니다.
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-251 Tube
N-CH 800V 3,9A 1400mOhm TO251-3
Power Field-Effect Transistor, 3.9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
IPU80R1K4 - 800V COOLMOS N-CHANNEL POWER;
800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage, PG-TO251-3, RoHS
Infineon SCT
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.085929 mg
Technical
Continuous Drain Current (ID)3.9 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance570 pF
Max Dual Supply Voltage800 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation63 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.4 Ω
Package Quantity1500
Power Dissipation63 W
Rds On Max1.4 Ω
Rise Time15 ns
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
Dimensions
Height9.55 mm