대체 부품
Price @ 1000
$ 1.11
$ 1.16
$ 1.16
Stock
246,206
204,751
204,751
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
80 A
80 A
80 A
Threshold Voltage
3 V
3 V
3 V
Rds On Max
8 mΩ
8 mΩ
8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
300 W
300 W
300 W
Input Capacitance
5.3 nF
3.7 nF
3.7 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTB80NF55-06T4
Power MOSFET, N Channel, 55 V, 40 A, 0.005 ohm, TO-263 (D2PAK), Surface Mount
STMicroelectronicsSTB80NF55-08T4
N-channel 55 V, 0.0065 Ohm typ., 80 A STripFET Power MOSFET in a D2PAK package
InfineonIRL2505STRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 104A;D2Pak;PD 200W;VGS +/-16V
설명
유통업체에서 제공한 STMicroelectronics STB140NF55T4에 대한 설명입니다.
N-CHANNEL 55V 0.0065 OHM 80A D2PAK STRIPFET II MOSFET
STB140NF55T4 N-channel MOSFET Transistor, 80 A, 55 V, 3-Pin D2PAK
Power MOSFET, N Channel, 55 V, 40 A, 0.0065 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 55V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.3 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
PackagingTape and Reel
Power Dissipation300 W
Rds On Max8 mΩ
Resistance6.5 mΩ
Rise Time150 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time125 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)55 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm