대체 부품
Price @ 1000
$ 0.847
$ 1.24
$ 1.24
Stock
1,627,690
219,702
219,702
Authorized Distributors
6
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
-
2 V
2 V
Rds On Max
6.5 mΩ
6.5 mΩ
6.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
170 W
170 W
170 W
Input Capacitance
3.45 nF
3.45 nF
3.45 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2012-12-28
LTD Date2013-06-28
관련 부품
InfineonIRL3705NSTRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;D2Pak;PD 170W;VGS +/-16V;-55d
InfineonIRF1010NSTRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V
STMicroelectronicsSTB60N55F3
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package
설명
유통업체에서 제공한 Infineon IRF3205ZSTRLPBF에 대한 설명입니다.
Single N-Channel 55 V 6.5 mOhm 76 nC HEXFET® Power Mosfet - D2PAK
170W(Tc) 20V 4V@ 250¦ÌA 110nC@ 10 V 1N 55V 6.5m¦¸@ 66A,10V 3.45nF@25V D2PAK
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:75A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:170W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRF3205ZSTRLPBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time67 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.45 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation170 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs20 V
Number of Channels1
Number of Elements1
On-State Resistance6.5 mΩ
Package Quantity800
PackagingBulk
Power Dissipation170 W
Rds On Max6.5 mΩ
Resistance6.5 MΩ
Rise Time95 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)55 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책