가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | PD55008TR-E | 600 | 600 | |||||||||
| Verical | PD55008TR-E | 600 | 600 | |||||||||
| DigiKey | 497-6474-1-ND | 345 | 1 | Cut Tape | ||||||||
| TME | PD55008TR-E | 0 | 1 | 9h | ||||||||
| Newark | PD55008TR-E | 0 | 1 | Cut Tape |
대체 부품
Price @ 1000
$ 10.018
$ 11.314
Stock
147,613
106,453
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
-
SOIC
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
4 A
4 A
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
52.8 W
52.8 W
Input Capacitance
-
58 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-12
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsPD55008S-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Diodes Inc.DMN4034SSD-13
DMN4034SSD Series 40 V 34 mOhm Dual N-Ch Enhancement Mode Mosfet - SOIC-8
설명
유통업체에서 제공한 STMicroelectronics PD55008TR-E에 대한 설명입니다.
Single N-Channel 40 V 52.8 W Silicon Surface Mount Mosfet - POWERSO-10RF
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
STMicroelectronics SCT
8W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Frequency500 MHz
Gain15 dB
Gate to Source Voltage (Vgs)20 V
Max Frequency1 GHz
Max Operating Temperature165 °C
Max Output Power8 W
Max Power Dissipation52.8 W
Min Breakdown Voltage40 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage12.5 V
Output Power8 W
PackagingTape and Reel
Power Dissipation52.8 W
Power Gain17 dB
Test Current150 mA
Test Voltage12.5 V
Voltage Rating40 V