가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN4034SSD-13 | 1,125 | 1 | Cut Tape | ||||||||
| DigiKey | DMN4034SSD-13CT-ND | 4,504 | 1 | Cut Tape | ||||||||
| TME | DMN4034SSD-13 | 0 | 2500 | 16h | ||||||||
| Avnet | DMN4034SSD-13 | 0 | 2500 | 19h | ||||||||
| RS (Formerly Allied Electronics) | DMN4034SSD-13 | 0 | 50 | Bulk | 9h |
관련 부품
Diodes Inc.DMP4025LSS-13
1.52W(Ta) 20V 1.8V@ 250¦ÌA 33.7nC@ 10 V 1P 40V 25m¦¸@ 3A,10V 6A 1.64nF@20V SOIC-8
InfineonIRF7421D1TRPBF
30V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE | Infineon IRF7421D1TRPBF
InfineonIRF7603TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.035Ohm;ID 5.6A;SO-8;PD 1.8W;VGS +/-20V;-55
설명
유통업체에서 제공한 Diodes Inc. DMN4034SSD-13에 대한 설명입니다.
DMN4034SSD Series 40 V 34 mOhm Dual N-Ch Enhancement Mode Mosfet - SOIC-8
Mosfet, Dual, N-Ch, 40V, 4.8A Rohs Compliant: Yes |Diodes Inc. DMN4034SSD-13
2.14W 20V 3V@ 250¦ÌA 18nC@ 10V 2N 40V 34m¦¸@ 6A,10V 4.8A 453pF@20V SOIC-8
Dual MOSFET, N Channel, 40 V, 40 V, 4.8 A, 4.8 A, 0.023 ohm
40V DUAL N-CH ENHANCEMENT MOSFET SOIC8
Small Signal Field-Effect Transistor, 4.8A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 40V 4.8A 8-Pin SO T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
场效应管, MOSFET, 双路, N沟道, 40V, 4.8A;
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)4.8 A
Drain to Source Resistance34 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationDual
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance453 pF
Max Operating Temperature150 °C
Max Power Dissipation2.14 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation2.14 W
Rds On Max34 mΩ
Rise Time2.7 ns
Schedule B8541290080
Turn-Off Delay Time14 ns
Turn-On Delay Time2.7 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책